| 摘要 |
<p>PURPOSE:To stabilize an electron emission by making the impurity density of the P type semiconductor to which a Schottky electrode is joined to be in the density range in which an avalanche breakdown is made to occur, and impressing reverse bias voltage to the Schottky electrode and the P type semiconductor. CONSTITUTION:A Schottky diode is formed with a Schottky electrode 5 joined to a P type semiconductor 1, and the joining part of the diode is reversely biased. This enables a vacuum level to a lower energy level than the conduction band of the P type semiconductor, and a large energy difference can be obtained. Moreover an avalanche amplification is made to occur in this condition. This enables a much electron to be produced, and the emission efficiency of the electron can be improved. The impurity density of a semiconductor used is made in the density range in which an avalanche breakdown occurs. And the material having a low work function is used to a Schottky electrode material.</p> |
