发明名称 II-III-V COMPOUND SEMICONDUCTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a novel II-III-V compound semiconductor. <P>SOLUTION: The present application provides a novel composition made of a novel compound semiconductor represented by Zn-(II)-III-N. The III represents one or more elements of the group III, and the (II) represents a given element which is one or more elements of the group II. The compound semiconductor includes ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN, and ZnAlGaInN. The compound semiconductor of this type is not known previously. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012033936(A) 申请公布日期 2012.02.16
申请号 JP20110165930 申请日期 2011.07.28
申请人 SHARP CORP 发明人 PETER NEIL TAYLOR;JONATHAN HEFFERNAN;HOOPER STEWART EDWARD;TIM MICHAEL SMEATON
分类号 H01L29/26;C09K11/62;C09K11/64;H01L31/04;H01L33/26;H01S5/32;H05B33/10;H05B33/14 主分类号 H01L29/26
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