| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve electrical characteristics furthermore when an impurity diffusion layer is formed in a semiconductor substrate used in a solar cell or the like. <P>SOLUTION: A diffusion agent composition which is used for printing a dopant component onto a semiconductor substrate contains a silicon nitride (A), a dopant component (B), and a non-dopant metal component (C). Among these components, content of Na which is contained as the non-dopant metal component (C) is under 60 ppb for the whole composition. <P>COPYRIGHT: (C)2012,JPO&INPIT |
