| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve productivity of a plug ion implantation process by using carborane molecular as an impurity source. CONSTITUTION: A gate(35) is formed on a substrate. A first impurity region is formed on both substrates of a gate. An interlayer dielectric layer(38) is formed on the substrate to cover the gate. A contact hole(39) is formed to expose a first impurity region by selectively etching the interlayer dielectric layer. A second impurity region is formed on the exposed first impurity region by a plug ion implantation process using the carborane molecular. A contact plug fills a contact hole.</p> |
