发明名称 Nitride light emitting device and manufacturing method thereof
摘要 A nitride light emitting device includes a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate. The second conduction type cladding layer has an uneven shape including at least one concave and/or convex portion.
申请公布号 US8101960(B2) 申请公布日期 2012.01.24
申请号 US20060919639 申请日期 2006.07.31
申请人 JEONG HWAN HEE;LG INNOTEK, LTD. 发明人 JEONG HWAN HEE
分类号 H01L33/00;H01L33/02;H01L33/38;H01L33/42 主分类号 H01L33/00
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