发明名称 |
Nitride light emitting device and manufacturing method thereof |
摘要 |
A nitride light emitting device includes a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate. The second conduction type cladding layer has an uneven shape including at least one concave and/or convex portion. |
申请公布号 |
US8101960(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20060919639 |
申请日期 |
2006.07.31 |
申请人 |
JEONG HWAN HEE;LG INNOTEK, LTD. |
发明人 |
JEONG HWAN HEE |
分类号 |
H01L33/00;H01L33/02;H01L33/38;H01L33/42 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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