| 摘要 |
Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater thanλ/n, and the second period being identical to or smaller thanλ/n, where n is a refractive index of the first conductive semiconductor layer, andλis a wavelength of light emitted from the active layer.
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