| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that in a field effect transistor having a gate insulation film including a high-dielectric constant insulation film, thickening a portion positioned at the underside of an end of a gate electrode at the gate insulation film results in crystallization of the high-dielectric constant insulation film, which may make it impossible to restrain the generation of a gate tunnel leakage current. <P>SOLUTION: In a semiconductor device, a gate insulation film 2 is formed on a semiconductor substrate 1, and a gate electrode 3 is formed on the gate insulation film 2. In the gate insulation film 2, the film thickness of a thick film portion 2a of the gate insulation film 2 positioned at the underside of both ends of the gate electrode 3 is larger than that of a central portion 2b of the gate insulation film 2 positioned at the underside of the central portion of the gate electrode 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
