| 摘要 |
<p>The disclosed solid-state imaging device (100) is provided with: a plurality of photoelectric conversion units (120) arranged in rows and columns in a pixel unit (110); a plurality of vertical transfer units (130) that are provided so as to correspond to the columns of photoelectric conversion units (120), where each vertical transfer unit transfers, in the column direction, signal charge read from the corresponding plurality of photoelectric conversion units (120); a first horizontal transfer unit (140a) and second horizontal transfer unit (140b) that are provided in parallel and that transfer, in the row direction, signal charge transferred by the plurality of vertical transfer units (130); and a first output unit (160a) and second output unit (160b) that contain a plurality of floating diffusion units, formed in regions adjacent to the output ends of the first and second horizontal transfer units (140a and 140b), and that output transferred signal charge in the form of electrical signals. The floating diffusion units are spaced farther apart than the adjacent horizontal transfer units are.</p> |
