| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of producing a SiC bulk single crystal having improved characteristics for producing devices, and a single crystal SiC substrate. <P>SOLUTION: In a method of producing a SiC bulk single crystal 2; a SiC-growing gas phase 9 is generated in a crystal-growing region 5 of a glowing crucible 3; the SiC bulk single crystal 2 having a central vertical axis 14 is grown by depositing it from the SiC-growing gas phase 9, when deposition is carried out on a boundary face 16 of the growing SiC bulk single crystal 2; the SiC-growing gas phase 9 is supplied at least partly from a SiC source material 6 residing in a store region 4 of the growing crucible 3 and contains at least one doping substance belonging to the group consisting of nitrogen, aluminum, vanadium, and boron; and the crystal-growing region 5 is demarcated into SiC surface sections and carbon surface sections, and selected so that the area ratio of SiC/C, which is obtained by subtracting a carbon surface section ratio from a SiC surface section ratio, always has a value smaller than 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
