发明名称 |
Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer |
摘要 |
A nondestructive testing method for an oxide semiconductor layer includes the steps of applying excitation light to an amorphous or polycrystalline target oxide semiconductor layer to be tested and measuring an intensity of photoluminescence in a wavelength region longer than a wavelength corresponding to a bandgap energy among light emitted from the target oxide semiconductor layer; and estimating a film property of the target oxide semiconductor layer on the basis of measurement results. |
申请公布号 |
US8080434(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20090622095 |
申请日期 |
2009.11.19 |
申请人 |
YAMAGUCHI NORIHIKO;TANIGUCHI SATOSHI;IKEDA MASAO;SONY CORPORATION |
发明人 |
YAMAGUCHI NORIHIKO;TANIGUCHI SATOSHI;IKEDA MASAO |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|