| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem with a conventional process that while no cracks and transcription and physical defects were observed, there were electrical malfunctions which resulted in a low yield, the conventional process being used for transcribing active elements formed on a glass substrate onto a film and then removing the glass substrate to leave the active elements on the film to form a thin-film, lightweight active element substrate. <P>SOLUTION: A manufacturing process has added thereto a step for heat-treating a plastic film 102 in an atmosphere where it contains exposed moisture vapor. Heat treatment in moisture vapor permits moisture contents to penetrate into the plastic film 102. This moisture vapor heat treatment results in a threshold voltage value of a transistor being brought back to a normal value near 0 V and further the current consumption of a semiconductor circuit and its standard deviation being reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
