| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a field-effect transistor having a small current collapse and an excellent high-frequency property. <P>SOLUTION: The field-effect transistor includes: a nitride semiconductor laminate 102 formed on a substrate 101; a source electrode 105; a drain electrode 106; a gate electrode 107; an insulator film 110 formed on the nitride semiconductor laminate 102; and a field plate 115 formed over the insulator film 110 in contact therewith and having an end located between the drain and gate electrodes 106 and 107. The insulator film 110 includes a first film 111 and a second film 112 having a dielectric withstanding voltage lower than that of the first film 111, and has a thin film portion 110a formed between the drain and gate electrodes 106 and 107. The field plate 115 covers the thin film portion 110a and is connected with the source electrode at an opening. <P>COPYRIGHT: (C)2012,JPO&INPIT |
