发明名称 |
CMOS RF power amplifier with LDMOS bias circuit for large supply voltages |
摘要 |
Bias circuitry that may be used within a communications or other device includes a first current mirror having first and second transistors with sources coupled to ground and operable to receive a reference current at a drain of first transistor. A second current mirror has first and second transistors with drains coupled to a battery voltage supply. A third current mirror has first and second transistors with drains coupled to sources of the first and second transistors of the second current mirror, respectively. A biasing transistor couples between the second transistor of the first current mirror and the first transistor of the third current mirror and operable to receive a tuning input voltage at its gate. A resistive element coupled between the second transistor of the third current mirror and ground produces a bias voltage produced at a connection of the resistive element and the second transistor of the third current mirror. |
申请公布号 |
US8072270(B2) |
申请公布日期 |
2011.12.06 |
申请号 |
US20090430645 |
申请日期 |
2009.04.27 |
申请人 |
AFSAHI ALI;BEHZAD ARYA REZA;RAMACHANDRA REDDY VIJAY;BROADCOM CORPORATION |
发明人 |
AFSAHI ALI;BEHZAD ARYA REZA;RAMACHANDRA REDDY VIJAY |
分类号 |
H03F3/04 |
主分类号 |
H03F3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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