发明名称 |
PROTECTION CIRCUIT FOR RADIO FREQUENCY POWER AMPLIFIER |
摘要 |
PURPOSE: A protection circuit for a RF(Radio Frequency) power amplifier is provided to improve an operation under a mismatch state by restricting not only a peak current but also a peak output voltage. CONSTITUTION: An overdrive protection circuit(100) comprises a first and a second transistors(102,104) and a detection resistance(106). The first and the second transistor are arranged in a Darlington structure. The overdrive protection circuit is combined with a RF(Radio Frequency) transmit line(108) through the detection resistance and a shunt line(110). The RF transmit line is combined with the input source of a RF signal(112) which generates a RF signal. The RF transmit line is combined with a current source(114) which offers a base bias current. The input source of the RF signal is able to be included in a transceiver. The RF transmit line is combined with the base of a primary power transistor(116) which serves as a power amplifier for the radio frequency signal. |
申请公布号 |
KR20110129836(A) |
申请公布日期 |
2011.12.02 |
申请号 |
KR20110050348 |
申请日期 |
2011.05.26 |
申请人 |
TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
YAO JINGSHI;HU PETER;SUN XIAOPENG;LIN BARRY JIA FU;MOKALLA MEHRA |
分类号 |
H03F1/52;H03F3/189 |
主分类号 |
H03F1/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|