| 摘要 |
<P>PROBLEM TO BE SOLVED: To photograph an image of wide dynamic range in which blooming is suppressed. <P>SOLUTION: In a solid state image sensor, a plurality of pixels formed in a two-dimensional array as well as signal reading circuits consisting of MOS transistors provided to the pixels are formed on a semiconductor substrate. Image sensor driving means performs a short-time exposure on a second pixel group (B group pixels) consisting of one of odd-number-row pixel rows and even-number-row pixel rows of the plurality of pixels during long-time exposure on a first pixel group (A group pixels) consisting of the other of odd-number-row pixel rows and even-number-row pixel rows, and applies reset signals 70 to reset transistors in the MOS transistors constituting the signal reading circuits of the second pixel group during the long-time exposure but not during the short-time exposure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
