发明名称 |
METHOD AND APPARATUS FOR MEASURING INTRA-DIE TEMPERATURE |
摘要 |
A method for measuring the intra-die temperature of a wafer with a fast response time is described. The method includes providing a wafer in a thermal process chamber, radiating the wafer in a first predetermined radiation range to heat the wafer to a predetermined temperature range for a predetermined time, receiving the radiation reflected from a die area while the wafer is being heated and detecting reflected radiation having a second predetermined radiation range, and determining a temperature of the die area by a processor being responsive to the detected second predetermined radiation range. |
申请公布号 |
US2011295539(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US20100789816 |
申请日期 |
2010.05.28 |
申请人 |
TSAI CHUN HSIUNG;WU CHII-MING;YU DE-WEI;CHAN CHIEN-TAI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI CHUN HSIUNG;WU CHII-MING;YU DE-WEI;CHAN CHIEN-TAI |
分类号 |
G01J5/00;G01K15/00;G06F19/00 |
主分类号 |
G01J5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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