摘要 |
<p>Provided is a radiation detector, wherein by setting surface irregularities on a graphite substrate (11) to a range of 1µm to 8µm, the film properties of a semiconductor layer (13) laminated on the graphite substrate (11) are stabilized, and adhesion between the graphite substrate (11) and the semiconductor layer (13) is improved. Even if an electron blocking layer (12) is interposed between the graphite substrate (11) and the semiconductor layer (13), the electron blocking layer (12) is thin, and the surface irregularities on the graphite substrate (11) are transferred to the electron blocking layer (12). As a consequence, the surface irregularities of the electron blocking layer (12) fall within approximately the same range, offering approximately the same effect as a configuration in which the semiconductor layer (13) is in direct contact with the graphite substrate (11).</p> |
申请人 |
SHIMADZU CORPORATION;YOSHIMUTA, TOSHINORI;TOKUDA, SATOSHI;TANABE, KOICHI;KISHIHARA, HIROYUKI;KAINO, MASATOMO;YOSHIMATSU, AKINA;SATO, TOSHIYUKI;KUWABARA, SHOJI |
发明人 |
YOSHIMUTA, TOSHINORI;TOKUDA, SATOSHI;TANABE, KOICHI;KISHIHARA, HIROYUKI;KAINO, MASATOMO;YOSHIMATSU, AKINA;SATO, TOSHIYUKI;KUWABARA, SHOJI |