发明名称 MQW LASER STRUCTURE COMPRISING PLURAL MQW REGIONS
摘要 Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
申请公布号 US2011243173(A1) 申请公布日期 2011.10.06
申请号 US201113161962 申请日期 2011.06.16
申请人 BHAT RAJARAM;NAPIERALA JEROME;SIZOV DMITRY;ZAH CHUNG-EN 发明人 BHAT RAJARAM;NAPIERALA JEROME;SIZOV DMITRY;ZAH CHUNG-EN
分类号 H01S5/343 主分类号 H01S5/343
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