| 摘要 |
PROBLEM TO BE SOLVED: To provide a hydroxyphenyl (meth)acrylate (co)polymer which has good solubility in a solvent and thoroughly reduces defects in coating when used in a semiconductor lithography solution, and a method for producing the (co)polymer. SOLUTION: The hydroxyphenyl (meth)acrylate (co)polymer used in a semiconductor lithography process is produced by radical polymerization which is performed by controlling a reaction liquid temperature in a reactor to 70-100°C, wherein the peak area of a high molecular weight component whose molecular weight is≥5 times a weight-average molecular weight (Mw) measured by gel permeation chromatography (GPC) is <0.2% relative to a total peak area. COPYRIGHT: (C)2011,JPO&INPIT |
