| 摘要 |
<p>Disclosed is a semiconductor light emitting element that is provided with a nitride semiconductor multilayer film, which is provided on the upper surface of a substrate (1), and which includes an active layer (6). A layer in contact with the lower surface of the active layer (6) or the active layer (6) has at least a recessed section (2), a step or a protruding section formed thereon, and on the upper portion of the nitride semiconductor multilayer film, a ridge stripe, which has the front end surface and the rear end surface, and which is to be an optical waveguide, is formed. The distance between the center in the width direction of the ridge stripe and the center in the width direction of the recessed section (2), the step or the protruding section continuously or gradually changes from the front end surface toward the rear end surface, and the band gap energy in the active layer (6) continuously or gradually changes from the front end surface toward the rear end surface.</p> |
