发明名称 |
BITLINE SENSE AMPLIFIER, MEMORY CORE INCLUDING THE SAME AND METHOD OF SENSING CHARGE FROM A MEMORY CELL |
摘要 |
A bitline sense amplifier includes a pre-sensing unit and an amplification unit. The pre-sensing unit is connected to a first bitline and a second bitline, and is configured to perform a pre-sensing operation by controlling a voltage level of the second bitline based on at least one pre-sensing voltage and variation of a voltage level of the first bitline. The amplification unit is configured to perform a main amplification operation by amplifying a pre-sensed voltage difference based on a first voltage signal and a second voltage signal. The pre-sensed voltage difference indicates a difference between the voltage level of the first bitline and the voltage level of the second bitline after the pre-sensing operation.
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申请公布号 |
US2011205822(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US201113006832 |
申请日期 |
2011.01.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JOUNG-YEAL;JANG SEONG-JIN;KWAK JIN-SEOK |
分类号 |
G11C7/06;G01R19/00 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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