发明名称 BITLINE SENSE AMPLIFIER, MEMORY CORE INCLUDING THE SAME AND METHOD OF SENSING CHARGE FROM A MEMORY CELL
摘要 A bitline sense amplifier includes a pre-sensing unit and an amplification unit. The pre-sensing unit is connected to a first bitline and a second bitline, and is configured to perform a pre-sensing operation by controlling a voltage level of the second bitline based on at least one pre-sensing voltage and variation of a voltage level of the first bitline. The amplification unit is configured to perform a main amplification operation by amplifying a pre-sensed voltage difference based on a first voltage signal and a second voltage signal. The pre-sensed voltage difference indicates a difference between the voltage level of the first bitline and the voltage level of the second bitline after the pre-sensing operation.
申请公布号 US2011205822(A1) 申请公布日期 2011.08.25
申请号 US201113006832 申请日期 2011.01.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JOUNG-YEAL;JANG SEONG-JIN;KWAK JIN-SEOK
分类号 G11C7/06;G01R19/00 主分类号 G11C7/06
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