发明名称 |
NITRIDE LIGHT EMITTING DEVICE |
摘要 |
PURPOSE: A nitride semiconductor light emitting device is provided to minimize the amount of generated heat to prevent the lifetime thereof from becoming shortened due to deterioration, thereby extending the lifetime of a light emitting device. CONSTITUTION: A substrate(10) has an uneven structure(11). An n-type nitride semiconductor layer(20) is formed on the substrate. An active layer(30) is formed on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(40) is formed on the active layer. The p/n-type nitride semiconductor layers are electrically connected to the p/n-type nitride semiconductor layers respectively.
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申请公布号 |
KR20110093006(A) |
申请公布日期 |
2011.08.18 |
申请号 |
KR20100012777 |
申请日期 |
2010.02.11 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
SHIM, HYUN WOOK;KANG, JOONG SEO;LEE, DONG JU |
分类号 |
H01L33/22 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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