发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device includes a bonding pad, and an area designation marking, wherein the bonding pad includes a first region, a second region, and a third region placed between the first region and the second region, wherein the area designation marking includes a first area designation mark configured to designate a first boundary between the first region and the third region and a second area designation mark configured to designate a second boundary between the second region and the third region, wherein the first region and the second region are configured to be contacted with a test probe, The first area designation mark includes a first notch or a first protrusion. The second area designation mark includes a second notch or a second protrusion. The first area designation mark includes a first pair of notches that is linearly spaced apart from each other to designate the first boundary line.
申请公布号 US2011175241(A1) 申请公布日期 2011.07.21
申请号 US201113064481 申请日期 2011.03.28
申请人 RENESAS ELECTRONICS CORPORATION 发明人 TANABE AKIHITO
分类号 H01L23/492 主分类号 H01L23/492
代理机构 代理人
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