发明名称 METHOD OF RECOVERING REACTION VESSEL FOR GROWING SINGLE CRYSTAL, AND METHOD OF GROWING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method enabling to grow a transparent single crystal when growing a single crystal next time, the method including recovering the reaction vessel, after growing a single crystal in a state of housing molten liquid containing sodium in a reaction vessel comprising alumina, yttria, or yttrium aluminum garnet by the flux method. SOLUTION: A single crystal is grown in a state of housing molten liquid containing sodium in a reaction vessel comprising alumina, yttria, or yttrium aluminum garnet by the flux method. The reaction vessel is made reusable by ultrasonically cleaning the reaction vessel thereafter, and then heating the reaction vessel in an oxidizing atmosphere at 1,300-1,600°C during 5-20 hours. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011136898(A) 申请公布日期 2011.07.14
申请号 JP20100268232 申请日期 2010.12.01
申请人 NGK INSULATORS LTD 发明人 IWAI MAKOTO;HIGASHIHARA SHUHEI
分类号 C30B29/38;C30B19/06 主分类号 C30B29/38
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