发明名称 METHOD FOR CHEMICAL VAPOR DEPOSITION
摘要 PURPOSE: A method for chemical vapor deposition is provided to improve a process efficiency by performing a process requiring a long time in a plurality of reaction chambers and increasing the operation efficiency of the reaction chamber. CONSTITUTION: In a method for chemical vapor deposition, a reaction chamber(100) includes first to sixth reaction chambers(110-160). A process of growing an active layer in the first reaction chamber and the second reaction chamber is performed. A cooling process is performed in the third reaction chamber A robot arm(350) loads a susceptor into a buffer chamber. The buffer chamber is provided to prevent the degradation of the thin film due to sudden temperature change.
申请公布号 KR20110078806(A) 申请公布日期 2011.07.07
申请号 KR20090135705 申请日期 2009.12.31
申请人 LIGADP CO., LTD. 发明人 HONG, SUNG JAE;HAN, SEOK MAN
分类号 H01L21/205 主分类号 H01L21/205
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