发明名称 |
METHOD FOR CHEMICAL VAPOR DEPOSITION |
摘要 |
PURPOSE: A method for chemical vapor deposition is provided to improve a process efficiency by performing a process requiring a long time in a plurality of reaction chambers and increasing the operation efficiency of the reaction chamber. CONSTITUTION: In a method for chemical vapor deposition, a reaction chamber(100) includes first to sixth reaction chambers(110-160). A process of growing an active layer in the first reaction chamber and the second reaction chamber is performed. A cooling process is performed in the third reaction chamber A robot arm(350) loads a susceptor into a buffer chamber. The buffer chamber is provided to prevent the degradation of the thin film due to sudden temperature change.
|
申请公布号 |
KR20110078806(A) |
申请公布日期 |
2011.07.07 |
申请号 |
KR20090135705 |
申请日期 |
2009.12.31 |
申请人 |
LIGADP CO., LTD. |
发明人 |
HONG, SUNG JAE;HAN, SEOK MAN |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|