PURPOSE: A low drop out regulator is provided to prevent the lowering of the operation speed of a circuit by being intercepted in a triode region and a dip triode region through a set reference voltage. CONSTITUTION: In a low drop out regulator, a first operational amplifier(11) comprises a first input receiving an input voltage. A first P-channel MOSFET(12) comprises a gate which is connected to the output of a first operational amplifier, a source connected to a power voltage, and a drain connected to an output terminal. A feedback circuit feedbacks a part of the voltage of the output terminal to the second input of the first operational amplifier. A triode limiter circuit(20) receives the voltage of the gate and source of the first P-channel MOSFET and compares it with a reference voltage. The triode limiter circuit limits the first P-channel MOSFET entering to a triode mode or a dip triode mode.
申请公布号
KR20110073988(A)
申请公布日期
2011.06.30
申请号
KR20090130811
申请日期
2009.12.24
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
HA, SANG HOON;KIM, SANG HEE;NA, JUN KYUNG;IIZUKA SHINICHI