| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve operation characteristics and reliability of a semiconductor device by providing a technology for satisfactorily manufacturing a TFT of gate-drain overlapped LDD (GOLD) structure with degradation-resistance for improved characteristics of the TFT, in semiconductor device. SOLUTION: A method is provided, for simplified process for the TFT of GOLD structure, by which a gate electrode is formed which comprises a first thin-film layer of heat-resistant conductive material and a second thin-film layer of such heat-resistant conductive material whose etching speed is higher than the first thin-film layer in the same etching atmosphere, with the second thin-film layer laminated on the first one, and by which a source region, a drain region, and an LDD region are formed with the gate electrode as a mask.</p> |
