MAGNETIC TUNNEL JUNCTION DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE COMPRISING THE SAME

摘要

PURPOSE: A magnetic tunnel junction device, a method of manufacturing the same and an electronic device comprising the same are provided to have a high magnetoresistance ratio by maintaining an electronic device having a magnetic tunnel junction device amorphous state in a thermal treatment process. CONSTITUTION: In a magnetic tunnel junction device, a method of manufacturing the same and an electronic device comprising the same, a vertical MTJ(100) comprises a pinned layer(30), a tunneling film(40), and a free layer(50). The pinned layer comprises a plurality of a pair of material layers(30P1~30Pn). The first material layer comprises a first rare-earth transition metal layer(30a) and a second rare-earth transition metal layer(30b) The tunneling film is used for the coherent tunneling of a spin polarization current. The free layer has a vertical magnetic anisotropy.