发明名称 RELAXATION OF STRAINED LAYERS
摘要 The present invention relates to a method for relaxing a strained material layer by depositing a first low-viscosity layer on a first face of a strained-material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained-material layer; and applying a mechanical pressure to a second face of the strained material layer which is opposite to the first face. The mechanical pressure is applied perpendicularly to the strained material layer during at least part of the heat treatment.
申请公布号 KR20110050637(A) 申请公布日期 2011.05.16
申请号 KR20117003004 申请日期 2009.08.06
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 LETERTRE FABRICE;MAZURE CARLOS;KRAMES MICHAEL R.;MCLAURIN MELVIN B.;GARDNER NATHAN F.
分类号 H01L21/20;H01L21/324 主分类号 H01L21/20
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