Magnetic memory device and method of magnetization reversal of the magnetization of at least one magnetic memory element

摘要

Method of magnetization reversal of the magnetization (M) of at least one first magnetic memory element of an array of magnetic memory elements comprising the steps of: applying a first magnetic field pulse to a first set of magnetic memory elements, and applying a second magnetic field pulse to a second set of magnetic memory elements, such that during the application of the first and second magnetic field pulse the magnetization (M) of said first magnetic memory element which is to be reversed upon the field pulse decay performs approximately an odd number of half precessional turns, wherein the magnetization (M) of at least one second magnetic memory element which is not to be reversed upon the field pulse decay performs approximately a number of full precessional turns. The underlying concept of the invention is to improve the bit addressing in an array of magnetic memory cells by reducing the ringing of the magnetization of the free layer of the magnetic cells which are not selected for reversal but which are nevertheless subject to the application of a magnetic field pulse. This can be achieved by applying a field pulse to these cells which induces approximately a full precessional turn of the magnetization of the free layer of the cells. After the full precessional turn the magnetization is oriented very near the initial orientation along the easy axis of magnetization and the magnetic ringing after application of the half select field pulse is reduced.