| 摘要 |
<p>#CMT# #/CMT# The method comprises producing source and drain regions (11, 120) in a substrate using a semiconductor and a first dielectric (241) on a substrate zone disposed between the source and drain regions to form a channel (121) of a memory device, depositing an ionic liquid comprising the nanoparticles made of an electrically conductive material in the substrate to seal the dielectric material, depositing the nanoparticles on the first dielectric, retreating the ionic liquid, and producing a second dielectric and a control grid on a part of the nanoparticles deposition. #CMT# : #/CMT# The method comprises producing source and drain regions (11, 120) in a substrate using a semiconductor and a first dielectric (241) on a substrate zone disposed between the source and drain regions to form a channel (121) of a memory device, depositing an ionic liquid comprising the nanoparticles made of an electrically conductive material in the substrate to seal the dielectric material, depositing the nanoparticles on the first dielectric, retreating the ionic liquid, and producing a second dielectric and a control grid on a part of the nanoparticles deposition. The production of source and drain regions is carried out by producing an artificial grid on the substrate, and implanting dopants in the substrate using the artificial grid as an implantation mask. The doped zones of the substrates form drain and source regions. Spacers (114, 116) are produced based on the dielectric material against side flanks of the artificial grid. A coating layer is deposited on the artificial grid, the spacers and the source and drain regions, and is planarized with a block on the grid. A part of the spacers is etched in contact with the substrate, where two openings are formed on remaining part of the spacers. The ionic liquid is equally deposited in the openings at the level of the substrate zones. The source and rain regions are siliconized. The deposition of the nanoparticles is carried out by incubation of the substrate and the ionic liquid for 5 minutes to 1 hour. A non-zero electrical potential difference is applied between the substrate and the ionic liquid and between source and drain regions and ionic liquid during the deposition of nanoparticles. The removal of the ionic liquid comprises rinsing the liquid with a solvent and drying or degrading the liquid by heat treatment at 200-500[deg] C. The second dielectric and the control grid is carried out by depositing a layer based on the dielectric material on the deposited nanoparticles, depositing a layer based on the electrically conductive material on the dielectric layer, and planarizing the electrically conductive layer and the dielectric layer. The ionic liquid is deposited by centrifugation or projection. #CMT#USE : #/CMT# The method is useful for making a memory device from nanoparticles, where the memory device is non-volatile memory device or flash memory device. #CMT#ADVANTAGE : #/CMT# The method is capable of economically making a compatible memory device from nanoparticles with improved size and controlled electron storage sites and without any defects, and improves the overall retention of information storage device in the insulation surrounding the nanoparticles without affecting the retention of electrons from other nanoparticles. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The figure shows a schematic view of a method for making a memory device from nanoparticles. 114, 116 : Spacers 118, 120 : Source and drain regions 121 : Channel 126, 128 : Upper layers 241 : First dielectric. #CMT#INORGANIC CHEMISTRY : #/CMT# Preferred Components: The nanoparticles in suspension in the ionic liquid are ruthenium. #CMT#ORGANIC CHEMISTRY : #/CMT# Preferred Components: The ionic liquid comprises an imidazolium cation carrying alkyl substituents, (1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)amide, and 1-octyl-3-methyl-imidazolium bis(trifluoromethylsulfonyl)amide.</p> |
