| 摘要 |
A buried decoupling capacitor apparatus and method are provided. According to various embodiments, a buried decoupling capacitor apparatus includes a semiconductor-on-insulator substrate having a buried insulator region and top semiconductor region on the buried insulator region. The apparatus embodiment also includes a first capacitor plate having a doped region in the top semiconductor region in the semiconductor-on-insulator substrate. The apparatus embodiment further includes a dielectric material on the first capacitor plate, and a second capacitor plate on the dielectric material. According to various embodiments, the first capacitor plate, the dielectric material and the second capacitor plate form a decoupling capacitor for use in an integrated circuit.
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