发明名称 |
Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same |
摘要 |
Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
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申请公布号 |
US7919142(B2) |
申请公布日期 |
2011.04.05 |
申请号 |
US20060348471 |
申请日期 |
2006.02.07 |
申请人 |
SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
YEOM GEUN-YOUNG;LEE DO-HAING;PARK BYOUNG-JAE;AHN KYEONG-JOON |
分类号 |
C23C16/00;C23C14/28;C23C14/30;H05B6/00;H05B7/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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