| 摘要 |
The invention relates to an electronic component having a circuit integrated on a semiconductor substrate, and a heat-conducting connection of the substrate by soldering using a carrier serving as a heat sink, wherein the invention proposes depositing a first, thicker Au layer (23) in the conventional back-side metallization of the substrate, thereafter a barrier coating (24), and, as the last layer, a thinner, second Au layer (25), wherein the material of the barrier coating is selected such that the barrier coating prevents the penetration by means of a diffusion barrier of Sn or AuSn from a liquid Au-Sn phase in the region of the second Au layer into the first Au layer (23) during the soldering process. The layer sequence of the back-side metallization is also deposited in the pass-through openings of the substrate, wherein the surface of the second Au layer comprises a reduced coatablity for the solder material due to the material diffused out of the barrier coating. |
