发明名称 |
METHOD FOR FORMING A COPPER (CU) BARRIER/SEED BILAYER FOR INTEGRATED CIRCUIT DEVICE FABRICATION |
摘要 |
<p>METHOD FOR FORMING A COPPER (Cu) BARRIER/SEED BILAYER FOR INTEGRATED CIRCUIT DEVICE FABRICATION A structure and method for forming a relatively thin diffusion barrier/seed bilayer for copper metallization in an electronic device is disclosed. A single layer of an alloy is formed over a dielectric (and possibly the copper layer). The alloy includes a copper platable metal (e.g., ruthenium) and a nitride forming material (e.g., tungsten) and nitrogen. The alloy layer is annealed, and the alloy naturally segregates into two layers. The first layer is a barrier layer including the nitride forming material and nitrogen. The second layer is a seed layer including the copper platable metal.</p> |
申请公布号 |
SG169312(A1) |
申请公布日期 |
2011.03.30 |
申请号 |
SG20100063089 |
申请日期 |
2010.08.30 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD.;NANYANG TECHNOLOGICAL UNIVERSITY |
发明人 |
MARTINA DAMAYANTI;THIRUMANY SRITHARAN;MANG NG CHEE |
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