发明名称 |
Semiconductor device and method for forming the same |
摘要 |
A memory device includes an insulating layer formed over a substrate, a gate formed over the insulating layer, and charge storage elements disposed over the insulating layer. The charge storage elements are separated from each other and are electrically insulated, and each of the charge storage elements is capable of storing at least one charge. The charge storage elements can include fullerenes.
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申请公布号 |
US7915668(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20070700019 |
申请日期 |
2007.01.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOLAKE SUBRAMANYA MAYYA;YEO IN-SEOK;JOO KYONG-HEE |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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