CU WIRING OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A copper wire of a semiconductor device and a forming method thereof are provided to improve the reliability of a copper wire by suppressing a seam and a void in a wire forming region. CONSTITUTION: An interlayer dielectric layer(102) with a wire forming region is formed on the upper side of a semiconductor substrate(100). A self-assembled monolayer(110) is formed on the surface of the wire forming region. A plurality of catalyst particles(112) are absorbed on the surface of the self-assembled monolayer. A metal layer(114) is formed on the self-assembled monolayer including the catalyst particles. A copper layer(116) is formed on the metal layer to bury the wire forming region.