发明名称 |
Semiconductor fin based nonvolatile memory device and method for fabrication thereof |
摘要 |
A semiconductor structure and a method for fabricating the semiconductor structure include a semiconductor fin having a first side and a second side opposite the first side. A first gate dielectric and a charge storage layer are successively layered upon the first side of the semiconductor fin. A second gate dielectric and a gate electrode are layered upon the second side and the charge storage layer. The semiconductor structure comprises a nonvolatile semiconductor device.
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申请公布号 |
US7898021(B2) |
申请公布日期 |
2011.03.01 |
申请号 |
US20070924699 |
申请日期 |
2007.10.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;LUO ZHIJIONG |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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