发明名称 |
Demodulation pixel incorporating majority carrier current, buried channel and high-low junction |
摘要 |
A demodulation pixel improves the charge transport speed and sensitivity by exploiting two effects of charge transport in silicon in order to achieve the before-mentioned optimization. The first one is a transport method based on the CCD gate principle. However, this is not limited to CCD technology, but can be realized also in CMOS technology. The charge transport in a surface or even a buried channel close to the surface is highly efficient in terms of speed, sensitivity and low trapping noise. In addition, by activating a majority carrier current flowing through the substrate, another drift field is generated below the depleted CCD channel. This drift field is located deeply in the substrate, acting as an efficient separator for deeply photo-generated electron-hole pairs. Thus, another large amount of minority carriers is transported to the diffusion nodes at high speed and detected. |
申请公布号 |
EP2284897(A2) |
申请公布日期 |
2011.02.16 |
申请号 |
EP20100172890 |
申请日期 |
2010.08.16 |
申请人 |
BUETTGEN, BERNHARD;FELBER, JONAS;LEHMANN, MICHAEL;OGGIER, THIERRY |
发明人 |
BUETTGEN, BERNHARD;FELBER, JONAS;LEHMANN, MICHAEL;OGGIER, THIERRY |
分类号 |
H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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