| 发明名称 |
Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung |
| 摘要 |
<p>A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al X In Y Ga (1-X-Y ) 2 O 3 where 0‰¦x‰¦1, 0‰¦y‰¦1 and 0‰¦x+y‰¦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.</p> |
| 申请公布号 |
DE60334754(D1) |
申请公布日期 |
2010.12.16 |
| 申请号 |
DE2003634754 |
申请日期 |
2003.05.30 |
| 申请人 |
KOHA CO. LTD. |
发明人 |
ICHINOSE, NOBORU;SHIMAMURA, KIYOSHI;KANEKO, YUKIO;GARCIA VILLORA, ENCARNACION;AOKI, KAZUO |
| 分类号 |
H01L33/00;C30B15/00;C30B15/34;C30B29/16;C30B29/40;H01L21/205;H01L33/28;H01L33/32;H01L33/40 |
主分类号 |
H01L33/00 |
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