| 摘要 |
A semiconductor device is provided with a semiconductor substrate, a plurality of active regions separated from each other by element isolation regions formed on the semiconductor substrate; gate oxide films formed on the active regions; gate electrodes formed on the gate oxide films; side wall insulation films formed on side surfaces of the gate electrodes; recessed parts formed in exposed surfaces of the active regions excluding regions that are covered by the gate electrodes and the side wall insulation films; dam insulation films provided to a periphery of the recessed parts; and silicon epitaxial layers formed within the recessed parts.
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