| 摘要 |
PROBLEM TO BE SOLVED: To increase the capacitance of an auxiliary capacitor formed on a substrate, and to prevent the fluctuation thereof. SOLUTION: When forming the semiconductor layers 13, 17 of a TFT substrate 1 provided with a TFT 4 and the auxiliary capacitor 5, IGZO whose main components are indium, gallium, zinc and oxygen is used. When manufacturing the TFT substrate 1, as processing for reducing the resistance of the auxiliary capacitor semiconductor layer 17, plasma processing is performed after forming a passivation layer 20 and before forming a pixel electrode 21. Thus, the auxiliary capacitor semiconductor layer 17 is made into a conductor, the capacitance of the auxiliary capacitor 5 is increased, and the capacitor fluctuation of the auxiliary capacitor 5 is prevented. COPYRIGHT: (C)2011,JPO&INPIT
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