| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element in which an Sb-based crystal of high quality is grown on an Si substrate. <P>SOLUTION: The semiconductor element includes a first layer 12 which is provided on the Si substrate 11, and contains Sb and a V-group element other than Sb and has a film thickness of 1 to 200 nm, and a second layer 13 which is provided on the first layer and contains Sb. <P>COPYRIGHT: (C)2011,JPO&INPIT |
