NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR SCREENING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is not influenced by a defective memory cell even if micro-fabrication develops, and provides a high yield.

SOLUTION: A memory cell is provided with: a variable resistance film functioning as a variable resistance element; a first conductive film coming into contact with one face of the variable resistance film; a second conductive film coming into contact with the other face of the variable resistance film; and a rectifier element layer formed so as to come into contact with a lower face of the second conductive film and functioning as a rectifier element. A width of the first conductive film or the second conductive film is smaller than a width of the variable resistance film.

COPYRIGHT: (C)2011,JPO&INPIT