发明名称 |
THIN-FILM TRANSISTOR (TFT) WITH AN EXTENDED OXIDE CHANNEL |
摘要 |
In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric adjacent the gate electrode. The TFT also includes a source electrode at least partially aligned with the gate electrode and separated from the gate electrode by the gate dielectric. The TFT also includes a drain electrode laterally offset from the gate electrode by at least 2 μm and separated from the gate electrode by the gate dielectric. The TFT also includes an extended oxide channel between the source electrode and the drain electrode, wherein a portion of the extended oxide channel is ungated.
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申请公布号 |
US2010244017(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20090415980 |
申请日期 |
2009.03.31 |
申请人 |
HOFFMAN RANDY;STASIAK JAMES W |
发明人 |
HOFFMAN RANDY;STASIAK JAMES W. |
分类号 |
H01L29/786;H01L21/34 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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