摘要 |
PROBLEM TO BE SOLVED: To improve the pattern formation of an organic semiconductor layer by an ink-jet method. SOLUTION: In the organic transistor active substrate 10, a thin-film transistor is configured by forming a gate electrode 2 on a substrate 1, a gate insulating film 3 on the gate electrode 2, a source electrode 4 and drain electrode 5 on the insulating film 3, and an active layer 6 consisting of an organic semiconductor material on the source-drain electrodes 4, 5, an interlayer film 7 is deposited on the thin-film transistor, and a pixel electrode 8 is laminated which is made electroconductive with the one of the source electrode 4 and the drain electrode 5 via a through hole 9 disposed on the interlayer film 7. On the source-drain electrodes 4, 5, two different SAM forming molecular species (a first SAM forming molecular species 12, a second SAM forming molecular species 14) are formed. COPYRIGHT: (C)2010,JPO&INPIT
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