| 摘要 |
Provided are a ZnO-based thin film which is inhibited from being doped with an unintentional impurity, and a semiconductor device. The ZnO-based thin film has a main surface: which is formed of MgxZn1-xO (0≦̸x<1) containing a p-type impurity; and which satisfies at least any one of the following conditions when the main surface is observed with an atomic force microscope: the density of observed hexagonal pits is not more than 5×106 pits/cm2; and no depressed portion, which includes multiple microcrystalline protrusions formed in the bottom portion of the depressed portion, is found in the main surface.
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