发明名称 |
MIGFET CIRCUIT WITH ESD PROTECTION |
摘要 |
An electrostatic discharge (ESD) protected circuit is coupled to a power supply voltage rail and includes a multiple independent gate field effect transistor (MIGFET), a pre-driver, and a hot gate bias circuit. The MIGFET has a source/drain path coupled between an output pad and the power supply voltage rail and has a first gate terminal and a second gate terminal. The pre-driver circuit has an output. The hot gate bias circuit is coupled to the first gate terminal of the MIGFET, and the output of the pre-driver circuit is coupled to the second gate terminal of the MIGFET. The hot gate bias circuit is configured to apply a bias voltage to the first gate terminal of the MIGFET during an ESD event that increases the breakdown voltage of the MIGFET so as to better withstand the ESD event. |
申请公布号 |
KR20100098680(A) |
申请公布日期 |
2010.09.08 |
申请号 |
KR20107015023 |
申请日期 |
2008.12.10 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
KHAZHINSKY MICHAEL G.;MATHEW LEO;MILLER JAMES W. |
分类号 |
H01L23/60;G05F1/00;H01L23/62 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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