MANUFACTURING METHOD OF ION IMPLANTATION GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR LAYER JUNCTION SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method or the like of an ion implantation group III nitride semiconductor substrate with a small warp and a group III nitride semiconductor layer junction substrate using the ion implantation group III nitride semiconductor substrate.

SOLUTION: This ion implantation group III nitride semiconductor substrate 20 includes an ion implantation region 20i which resides at one principal plane 20m side and is formed by a predetermined depth D from the principal plane 20, and has a thickness T of 500 μm or larger. Moreover, the manufacturing method of the group III nitride semiconductor layer junction substrate comprises steps of: injecting an ion I into the one principal plane 20m side of the group III nitride semiconductor substrate 20 with a thickness of 500 to 5 cm at a predetermined depth D from the principal plane 20m; connecting a different kind of a substrate 10 to the principal plane 20m of the group III nitride semiconductor substrate 20; and obtaining a group III nitride semiconductor layer junction substrate 1 by separating the group III nitride semiconductor substrate 20 in a region to which the ion I is injected and by forming a group III nitride semiconductor layer 20a connected to the different kind of substrate 10.

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