| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that with recent shrinking semiconductor process, insulating layers formed between interconnect layers are becoming thin and materials of a low dielectric constant have been used for an insulating layer in a multilayer interconnect to avoid parasitic capacitance between the interconnect layers, but Low-k materials have low material strength compared with the conventional insulating layers and porous low-k materials are structurally more fragile. <P>SOLUTION: According to a manufacturing method of a semiconductor device having a multilayer interconnect layer including a Low-k layer, in step cutting system dicing in which after formation of a groove in a semiconductor water with a tapered blade, the groove is divided with a straight blade thinner than the groove width, the multilayer interconnect layer portion is cut while being covered with a tapered face and then the wafer is separated with a thin blade which is not brought into contact with the multilayer interconnect layer portion. A relatively fragile Low-k layer is not damaged. <P>COPYRIGHT: (C)2010,JPO&INPIT |
